Vertical type integrated circuit devices and memory devices including conductive lines supported by Mesa structures and methods of fabricating the same
US8791526B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2010 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Aug 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/512
Abstract
A vertical type integrated circuit device includes a substrate and a pillar vertically protruding from the substrate. The pillar includes a lower impurity region and an upper impurity region therein and a vertical channel region therebetween. A portion of the pillar including the lower impurity region therein includes a mesa laterally extending therefrom. The device further includes a first conductive line extending on a first sidewall of the pillar and electrically contacting the lower impurity region, and a second conductive line extending on a second sidewall of the pillar adjacent the vertical channel region. The second conductive line extends in a direction perpendicular to the first conductive line and is spaced apart from the mesa. Related devices and methods of fabrication are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.