ESD-robust I/O driver circuits
US8792219B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2012 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Aug 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ESD-robust I/O driver circuit is disclosed. Embodiments include providing a first NMOS transistor having a first source, a first drain, and a first gate; coupling the first source is coupled to a ground rail, and the first drain to an I/O pad; providing a gate driver control circuit including a second NMOS transistor having a second source, a second drain, and a second gate; and coupling the second drain to the first gate, the second source to the ground rail, wherein the gate driver control circuit provides a ground potential to the first gate during an ESD event occurring from the I/O pad to the ground rail.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.