Nonvolatile semiconductor memory device and data writing method
US8792287B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 6, 2012 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Sep 7, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0475
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory quickly and precisely accumulates a desired amount of charges corresponding to data-to-be-written in a charge accumulating part of a memory cell. When charges are injected into the charge accumulating part of the memory cell by applying a writing voltage corresponding to the data-to-be-written to the drain or source region of the memory cell, the writing voltage is reduced on the basis of an increase in the amount of charges accumulated in the charge accumulating part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.