Patent · US Active

Multilayered NONON membrane in a MEMS sensor

US8794075B2 · kind B2 · utility

1Cited by
4References
22Claims
0Family size

Assignee

Inventor

Key dates

Filing dateAug 11, 2011
Grant dateAug 5, 2014
Priority date
Expiry dateMar 12, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L9/0073
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Various embodiments relate to a MEMS pressure sensor including: a lower electrode; a first insulating layer over the lower electrode; a second insulating layer over the first insulating layer that forms a cavity between the first and second insulating layers; an upper electrode over the second insulating layer, wherein a portion of the cavity is between the upper and lower electrodes; and a NONON pressure membrane over the upper electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.