Sputtering target for oxide semiconductor, comprising InGaO3(ZnO) crystal phase and process for producing the sputtering target
US8795554B2 · kind B2 · utility
23Cited by
11References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2009 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Nov 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a sputtering target for an oxide semiconductor, comprising In, Ga, and Zn. Also disclosed are a process for producing the sputtering target, a thin film of an oxide semiconductor using a sputtering target, and a method for thin-film transistor formation. The sputtering target comprises an oxide sintered compact containing a compound having a homologous crystal structure represented by InGaO3(ZnO) and exhibits such an X-ray diffraction pattern that the proportion of peaks at 2θ=62 to 63 degrees to the maximum peak of InGaO3(ZnO) is not more than 3%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.