Method and apparatus for depositing nanostructured thin layers with controlled morphology and nanostructure
US8795791B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Nov 30, 2010 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Apr 17, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/513
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing, by means of plasma, nanostructured thin layers particularly of the hierarchically organized type, and an apparatus for implementing the method, are described. At least a first chamber (10) is provide in which are present an injector (14) of a reagent gas, means (31, 31′) for feeding inert gases, and an antenna (16) for the creation of a plasma in said first chamber. Enclosing said first chamber is a second chamber (11) to which a pumping system is connected, containing a housing for the substrate (35) on which the nanostructured film is produced. A wall (12) separates said first chamber from said second chamber and has at least one opening (13). The injector and antenna are arranged in the first chamber with a geometry such that the distance between the outlet of said injector is at a distance of no more than 5 cm from the plane of the surface of said antenna farther from said wall, and said surface is at a distance of no more than 5 cm from said opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.