Positive resist composition and patterning process
US8795942B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2007 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Feb 17, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.