Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
US8796116B2 · kind B2 · utility
60Cited by
8References
23Claims
0Family size
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Key dates
| Filing date | Jan 20, 2012 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Jan 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.