Thin-film semiconductor device and method for fabricating thin-film semiconductor device
US8796692B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2012 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Oct 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film semiconductor device includes: a gate electrode; a channel layer; a first amorphous semiconductor layer; a channel protective layer; a pair of second amorphous semiconductor layers formed on side surfaces of the channel layer; and a pair of contact layers which contacts the side surfaces of the channel layer via the second amorphous semiconductor layers. The gate electrode, the channel layer, the first amorphous semiconductor layer, and the channel protective layer are stacked so as to have outlines that coincide with one another in a top view. The first amorphous semiconductor layer has a density of localized states higher than those of the second amorphous semiconductor layers. The second amorphous semiconductor layers have band gaps larger than that of the first amorphous semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.