Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers
US8796714B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2010 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Apr 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.