Patent · US Active

Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers

US8796714B2 · kind B2 · utility

2Cited by
3References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 25, 2010
Grant dateAug 5, 2014
Priority date
Expiry dateApr 9, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/835

Abstract

A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.