Patent · US Active

Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same

US8796729B2 · kind B2 · utility

56Cited by
58References
20Claims
0Family size

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Key dates

Filing dateNov 20, 2012
Grant dateAug 5, 2014
Priority date
Expiry dateNov 20, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/611

Abstract

Junction-isolated blocking voltage devices and methods of forming the same are provided. In certain implementations, a blocking voltage device includes an anode terminal electrically connected to a first p-well, a cathode terminal electrically connected to a first n-well, a ground terminal electrically connected to a second p-well, and an n-type isolation layer for isolating the first p-well from a p-type substrate. The first p-well and the first n-well operate as a blocking diode. The blocking voltage device further includes a PNPN silicon controlled rectifier (SCR) associated with a P+ region formed in the first n-well, the first n-well, the first p-well, and an N+ region formed in the first p-well. Additionally, the blocking voltage device further includes an NPNPN bidirectional SCR associated with an N+ region formed in the first p-well, the first p-well, the n-type isolation layer, the second p-well, and an N+ region formed in the second p-well.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.