Semiconductor device comprising trench gate and buried source electrodes

US8796764B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Oliver Blank · Villach, AT
• Uli Hiller · Bad Abbach, DE

Key dates

• Filing date: Sep 30, 2008
• Grant date: Aug 5, 2014
• Expiry date: Jun 19, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor device includes a semiconductor substrate, a trench, a buried insulated source electrode arranged in a bottom portion of the trench, a first gate electrode and a second gate electrode arranged in an upper portion of the trench and spaced apart from one another. A surface gate contact extends into the upper portion of the trench and is in physical and electrical contact with the first gate electrode and second gate electrode.