RF and milimeter-wave high-power semiconductor device
US8796843B1 · kind B1 · utility
7Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2010 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Jun 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1306
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High-power and high-frequency semiconductor devices require high signal integrity and high thermal conductance assembly technologies and packages. In particular, wide-gap-semiconductor devices on diamond benefit from spatially separate electrical and thermal connections. This application discloses assembly and package architectures that offer high signal integrity and high thermal conductance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.