Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US8796904B2 · kind B2 · utility
17Cited by
327References
17Claims
0Family size
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Key dates
| Filing date | Oct 31, 2011 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Mar 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/584
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.