CMOS image sensor having wide dynamic range and sensing method thereof
US8797434B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2010 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Aug 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/78
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are a CMOS image sensor having a wide dynamic range and a sensing method thereof. Each unit pixel of the CMOS image sensor of the present invention includes multiple processing units, so that one shuttering section for the image generation of one image frame can be divided into multiple sections to separately shutter and sample the divided sections by each processing unit. Thus, the image sensor of the present invention enables many shuttering actions to be performed in the multiple processing units, respectively, and the multiple processing units to separately sample each floating diffusion voltage caused by the shuttering actions, thereby realizing a wide dynamic range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.