Solar cell and process for producing the same
US8802187B2 · kind B2 · utility
1Cited by
4References
4Claims
0Family size
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Key dates
| Filing date | Jun 22, 2010 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | May 11, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.