Betavoltaic battery with a shallow junction and a method for making same
US8802456B2 · kind B2 · utility
3Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2012 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Oct 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02579
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+ N− SiC junctions and a pillared or planar device surface (as an example). Junctions are deemed “ultra shallow”, since the thin junction layer (which is proximal to the device's radioactive source) is only 300 nm to 5 nm thick (as an example). This is a betavoltaic device, made of ultra-shallow junctions, which allows such penetration of emitted lower energy electrons, thus, reducing or eliminating losses through electron-hole pair recombination at the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.