Method for manufacturing semiconductor device and method for manufacturing solid state image sensor using multiple insulation films
US8802478B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2012 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Sep 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Manufacturing a semiconductor device includes preparing a structure including a semiconductor substrate having a first region and a second region, a first insulating film arranged on the first region, a second insulating film arranged on the first insulating film, a third insulating film arranged on the second insulating film, a fourth insulating film arranged on the second region, a fifth insulating film arranged on the fourth insulating film, and a sixth insulating film arranged on the fifth insulating film, etching the second insulating film and the first insulating film under different etching conditions after etching the third insulating film, and continuously etching the fifth insulating film and the fourth insulating film under the same etching conditions after etching the sixth insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.