Semiconductor surface modification
US8802549B2 · kind B2 · utility
3Cited by
58References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2012 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Apr 30, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices associated with surface modifying a semiconductor material are taught. One such method includes providing a semiconductor material having a target region and providing a dopant fluid layer that is adjacent to the target region of the semiconductor material, where the dopant fluid layer includes at least one dopant. The target region of the semiconductor material is lased so as to incorporate the dopant or to surface modify the semiconductor material. During the surface modification, the dopant in the dopant fluid layer is actively replenished.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.