Method for producing semiconductor components on a substrate, and substrate comprising semiconductor components

US8802566B2 · kind B2 · utility

Assignee

• ESPROS Photonics AG · CH

Inventors

• Martin Popp · Dresden, DE
• Beat De Coi · Sargans, CH
• Marco Annese · Chur, CH

Key dates

• Filing date: Aug 24, 2012
• Grant date: Aug 12, 2014
• Expiry date: Aug 24, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0338
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing semiconductor components on a substrate including photolithographic patterning steps, in which method, on the substrate, a first layer to be patterned is applied and a second layer serving as a mask layer for the first layer to be patterned is applied, wherein a third layer serving as a mask for the second layer is applied, and wherein at least two photolithographic patterning processes are carried out successively for the second layer, wherein, during one of the patterning processes, after the production of a structure made from a photosensitive layer for the provision of a mask layer for a patterning process at the third layer, positive ramp angles α are produced at the patterning edges of the third layer, as a result of which the structures remaining free, given a thickness h of the third layer, decrease in size by a value D=2*h/tan α.