Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation
US8803112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2013 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Aug 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/006
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A novel composition, system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions species. The active silicon ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated solely from SiF4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.