Light-emitting device and method for manufacturing same
US8803159B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2013 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Oct 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01079
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Disclosed is a light-emitting device comprising a light-emitting element (10) composed of a gallium nitride compound semiconductor having an emission peak wavelength of not less than 430 nm; a molded body (40) provided with a recessed portion having a bottom surface on which the light-emitting element (10) is mounted and a lateral surface; and a sealing member (50) containing an epoxy resin including a triazine derivative epoxy resin, or a silicon-containing resin. The molded body (40) is obtained by using a cured product of a thermosetting epoxy resin composition essentially containing an epoxy resin including a triazine derivative epoxy resin, and has a reflectance of not less than 70% at the wavelengths of not less than 430 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.