Nonvolatile semiconductor memory device and method of fabricating the same
US8803221B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Nov 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a nonvolatile semiconductor memory device includes a substrate; a tunnel insulating film on the substrate; a charge storage layer on the tunnel insulating film; a block insulating film on the charge storage layer; a first element isolation insulating film in an element isolation trench in the substrate, having a bottom surface lower than an interface between the substrate and the tunnel insulating film, and having a top surface lower than an interface between the charge storage layer and the block insulating film; a second element isolation insulating film on the first element isolation insulating film, protruding to a top surface of the block insulating film, in contact with a side surface of the block insulating film, and having a higher Si concentration than the block insulating film; and a control gate electrode on the block insulating film and on the second element isolation insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.