Semiconductor electronic components with integrated current limiters
US8803246B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2012 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Jul 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/01
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, and a gate electrode of the high-voltage depletion-mode transistor is electrically coupled to the source electrode of the low-voltage enhancement-mode transistor. The on-resistance of the enhancement-mode transistor is less than the on-resistance of the depletion-mode transistor, and the maximum current level of the enhancement-mode transistor is smaller than the maximum current level of the depletion-mode transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.