Metal-oxide-semiconductor field-effect transistor and method for manufacturing the same
US8803250B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 18, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Mar 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/235
Abstract
A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is disclosed. The MOSFET includes a substrate, a well region formed in the substrate, a shallow channel layer, a channel, a gate oxide layer, a gate region, a source region, and a drain region. The shallow channel layer is formed on a portion of the well region and includes a first shallow channel region and a second shallow channel region. The channel is arranged between the first shallow channel region and the second shallow channel region and connects the first shallow channel region and the second shallow channel region. Further, the gate oxide layer is formed on a portion of the well region between the first shallow channel region and the second shallow channel region and includes a first gate oxide region and a second gate oxide region arranged on different sides of the channel. The gate region is formed on the channel and the gate oxide layer; the source region is formed in the first shallow channel region and vertically extends into the well region under the first shallow channel region; and the drain region is formed in the second shallow channel region and vertically extends into the well region under the second…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.