Room-temperature magnetoelectric multiferroic thin films and applications thereof
US8803264B1 · kind B1 · utility
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31Claims
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Key dates
| Filing date | May 27, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Mar 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/078
Abstract
The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe0.67W0.33O3)x (PbZr0.53Ti0.47O3)1-x (0.2≦x≦0.8) (PFWx−PZT1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.