Noncontact determination of interface trap density for semiconductor-dielectric interface structures
US8803533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2012 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Oct 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Embodiments of the subject method and apparatus relate to a sequence of noncontact Corona-Kelvin Metrology that allows the determination and monitoring of interface properties in dielectric/wide band gap semiconductor structures. The technique involves the incremental application of precise and measured quantities of corona charge, QC, onto the dielectric surface followed by determination of the contact potential difference, VCPD, as the material structure response. The V-Q characteristics obtained are used to extract the surface barrier, VSB, response related to the applied corona charge. An intersection of the VCPD-QC characteristic obtained in the dark with the VOX-QC characteristic representing the dielectric response is determined. The specific VSB-QC dependence surrounding the reference VFB value is obtained and the dielectric interface trap density and its spectrum is determined. A method and apparatus to quantify and separate trapped charge components is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.