Highly dielectric film having high withstanding voltage
US8804307B2 · kind B2 · utility
2Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2008 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Feb 27, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08J2327/16
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a highly dielectric film formed by using (A) a fluorine-containing resin comprising vinylidene fluoride unit and tetrafluoroethylene unit in a total amount of not less than 95% by mole, and provides a film for a film capacitor which has high dielectric property and high withstanding voltage and can be made thin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.