Quantum cascade semiconductor laser
US8804785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2013 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | May 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A quantum cascade semiconductor laser includes a n-type semiconductor substrate, the substrate having a main surface; a mesa waveguide disposed on the substrate, the mesa waveguide including a core layer and an n-type upper cladding layer disposed on the core layer; a first semiconductor layer disposed on a side surface of the mesa waveguide and the main surface of the substrate, the first semiconductor layer being in contact with the side surface of the mesa waveguide; and a second semiconductor layer disposed on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer constitute a burying region embedding the side surfaces of the mesa waveguide. The first semiconductor layer is formed of at least one of a semi-insulating semiconductor and a p-type semiconductor. In addition, the second semiconductor layer is formed of an n-type semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.