Vertical stacking of graphene in a field-effect transistor
US8809837B2 · kind B2 · utility
15Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2013 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Aug 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first graphene sheet as well as to influence an electric field of the second graphene sheet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.