Semiconductor device
US8809853B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2012 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | May 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
With a combination of a transistor including an oxide semiconductor material and a transistor including a semiconductor material other than an oxide semiconductor, a semiconductor device with a novel structure in which data can be retained for a long time and does not have a limitation on the number of writing can be obtained. When a connection electrode for connecting the transistor including a semiconductor material other than an oxide semiconductor to the transistor including an oxide semiconductor material is smaller than an electrode of the transistor including a semiconductor material other than an oxide semiconductor that is connected to the connection electrode, the semiconductor device with a novel structure can be highly integrated and the storage capacity per unit area can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.