Nanowire light emitting device and method of manufacturing the same
US8809901B2 · kind B2 · utility
1Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Mar 30, 2010 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Jan 16, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/95
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.