Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device
US8809908B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2008 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Apr 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; a Ge layer that is crystal-grown on the wafer and shaped as an isolated island; a buffer layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing P; and a functional layer that is crystal-grown on the buffer layer. The Ge layer may be shaped as an island having a size that does not exceed double a distance moved by crystal defects as a result of annealing the Ge layer at a certain temperature for a certain time. The Ge layer may be shaped as an island having a size for which stress due to a difference relative to a thermal expansion coefficient of Si, which is material of the wafer, does not cause crystal defects when the Ge layer is annealed at a certain temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.