Semiconductor device and manufacturing method thereof
US8809992B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2012 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Jan 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.