E-fuse structures and methods of operating and manufacturing the same
US8809997B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2012 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Oct 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An e-fuse structure includes a first doped region and a second doped region formed in a substrate. The first doped region has a first conductivity type and the second doped region has a second conductivity type different from the first conductivity type. The first and second doped regions contact each other. A conductive pattern is disposed on the first and second doped regions and contacts the first and second doped regions. A first contact plug is disposed on the conductive pattern in an area corresponding to the first doped region, and a second contact plug is disposed on the conductive pattern in an area corresponding to the second doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.