Methods, systems and devices for electrostatic discharge protection

US8810004B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Stefan Berglund · Eindhoven, NL
• Steffen Holland · Hamburg, DE
• Uwe Podschus · Lüneburg, DE

Key dates

• Filing date: Nov 26, 2009
• Grant date: Aug 19, 2014
• Expiry date: Nov 26, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/617

Abstract

A resistor-equipped transistor includes a package that provides an external collector connection node (114, 134), an external emitter connection node (120, 140) and an external base connection node (106, 126). The package contains a substrate upon which a transistor (102, 122), first and second resistors, and first and second diodes are formed. The transistor has an internal collector (118, 138), an internal emitter (120, 140) and an internal base (116, 136) with the first resistor (104, 124) being electrically connected between the internal base and the external base connection node and the second resistor (108, 128) being electrically connected between the internal base and the internal emitter. The first and second diodes are electrically connected in series between the external base connection node and the external collector connection node with the first diode (112, 132) having a first cathode-anode orientation that is opposite of a second cathode-anode orientation corresponding to the second diode (110, 130).