Infrared semiconductor laser

US8811442B2 · kind B2 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Nicola Schulz · Turgi, CH
• Marcel Rattunde · Gundelfingen, DE
• Joachim Wagner · Ludwigshafen, DE
• Benno Rösener · Glückstadt, DE

Key dates

• Filing date: Aug 13, 2010
• Grant date: Aug 19, 2014
• Expiry date: Jul 5, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/34346
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The present invention relates to a semiconductor laser having at least one quantum film in which electron hole pairs can be recombined, having at least two barrier layers between which respectively one of the at least one quantum films is disposed adjacently to these, directly in a planar manner or via respectively one intermediate film, and also having a pump device, the barrier layers having or consisting of AlzGa1-zAsySb1-y, with y greater than or equal to zero and less than or equal to one and z less than or equal to one and greater than 0.4, and/or having or consisting of AlzGauInvAsySb1-y, with z+u+v=1 and z greater than 0.25, the electron hole pairs being able to be produced directly in the quantum film with the pump device.