Patent · US Active

Enhanced vbasis laser diode package

US8811445B2 · kind B2 · utility

2Cited by
6References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 29, 2010
Grant dateAug 19, 2014
Priority date
Expiry dateJun 24, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/4043
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.