Patent · US Active

Laser module manufacturing method and laser module

US8811779B2 · kind B2 · utility

1Cited by
3References
4Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 20, 2012
Grant dateAug 19, 2014
Priority date
Expiry dateAug 2, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49002
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An optical semiconductor element is held in a junction-up state at an approach start position that is isolated from a mount face of a planar lightwave circuit, and the top-face height of the optical semiconductor element and the surface height of the planar lightwave circuit are aligned by bringing the optical semiconductor element closer towards the mount face. Further, the height of the active layer of the optical semiconductor element is aligned with the height of a waveguide of the planar lightwave circuit by bringing the optical semiconductor element towards the mount face for an amount of a difference between a reference value of a distance on design from the surface of the planar lightwave circuit to the center of the waveguide and a reference value of a distance on design from the top face of the optical semiconductor element to the center of the active layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.