Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode
US8814622B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2011 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Aug 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J21/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.