Thin film deposition method
US8815340B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 10, 2010 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Dec 16, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/345
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The subject of the invention is a heat treatment process by flame treatment of at least one thin film deposited on a glass substrate (1) running in the path of at least one flame treatment device comprising at least one burner (2), said treatment being able to increase the degree of crystallization of said at least one thin film and/or to increase the size of the crystallites in said at least one thin film, said process being characterized in that the maximum transient bending “b” is less than 150 mm and respects the following condition:b≦0.9×d
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.