Film forming method and method for manufacturing film-formation substrate
US8815352B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 28, 2011 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Feb 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/231
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
One embodiment of the present invention is a film forming method including the steps of forming an absorption layer 12 over one surface of a first substrate 11; forming a layer 16 containing a high molecular compound over the absorption layer; removing an impurity in the layer containing the high molecular compound by performing a first heat treatment on the layer 16; forming a material layer 18 containing a first film formation material and a second film formation material over the layer 16; performing a second heat treatment to form a mixed layer 19 in which the material layer and the layer 16 are mixed over the absorption layer; and performing third heat treatment to form a layer 19a containing the first film formation material and the second film formation material on a film-formation target surface of a second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.