Method for manufacturing an intergrated pressure sensor
US8815623B2 · kind B2 · utility
0Cited by
27References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2009 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Jan 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A differential pressure sensor comprises a membrane arranged over a cavity on a semiconductor substrate. A lid layer is arranged at the top side of the device and comprises an access opening for providing access to the top side of the membrane. A channel extends laterally from the cavity and intersects with a bore. The bore is formed by laser drilling from the bottom side of the substrate and provides access to the bottom side of the membrane. The bore extends all through the substrate and optionally into the lid layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.