Method of manufacturing an optical reflector with semiconductor nanocrystals
US8815629B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Aug 10, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing an optical reflector including an alternating stack of at least one first layer of complex refraction index n1 and at least one second layer of complex refraction index n2, in which the first layer includes semiconductor nanocrystals, including the following steps: calculation of the total number of layers of the stack, of the thicknesses of each of the layers and of the values of complex refraction indices n1 and n2 on the basis of the characteristics of a desired spectral reflectivity window of the optical reflector, including the use of an optical transfer matrices calculation method; calculation of deposition and annealing parameters of the layers on the basis of the total number of layers and of the values of previously calculated complex refraction indices n1 and n2; deposition and annealing of the layers in accordance with the previously calculated parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.