Photo diode for detecting X-ray and manufacturing method thereof
US8816294B2 · kind B2 · utility
1Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Jul 28, 2010 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Mar 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/20
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
An x-ray detection photo diode is disclosed. The disclosed x-ray detection photo diode includes: a substrate; a first electrode formed on the substrate; a photoconductor layer formed on the first electrode in a narrower area than that of the first electrode; and a second electrode formed on the photoconductor layer. In this manner, the x-ray detection photo diode enables the electrode structure to be changed. As such, a leakage current generated in edges of the x-ray detection photo diode can be minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.