Semiconductor device comprising oxide semiconductor layer
US8816349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2010 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Nov 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.