Semiconductor device having a laser annealed semiconductor layer
US8816351B2 · kind B2 · utility
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2References
13Claims
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Key dates
| Filing date | Nov 21, 2011 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Nov 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02422
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.