Field effect power transistors

US8816395B2 · kind B2 · utility

Assignee

• VISIC TECHNOLOGIES LTD · IL

Inventors

• Gregory Bunin · Lake Zurich, US
• Tamara Baksht · Nes Ziona, IL
• David Rozman · Kiryat Malachi, IL

Key dates

• Filing date: Aug 23, 2011
• Grant date: Aug 26, 2014
• Expiry date: Jul 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/257

Abstract

A normally OFF field effect transistor (FET) having a plurality of contiguous nitride semiconductor layers having different composition and heterojunction interfaces, wherein when there is no potential difference between a first gate and a common ground voltage, a two dimensional electron gas (2DEG) is present at a plurality of heterojunctions in each of a source access region and a drain access region, and substantially no 2DEG is present adjacent any regions of the heterojunctions under the first gate.