E-mode high electron mobility transistor and method of manufacturing the same
US8816396B2 · kind B2 · utility
10Cited by
4References
14Claims
0Family size
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Key dates
| Filing date | Aug 31, 2011 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Dec 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
Abstract
According to an example embodiment, a high electron mobility transistor (HEMT) includes a substrate, a buffer layer on the substrate, a channel layer on the buffer layer, and a barrier structure on the channel layer. The buffer layer includes a 2-dimensional electron gas (2DEG). A polarization of the barrier structure varies in a region corresponding to a gate electrode. The HEMT further includes and the gate electrode, a source electrode, and a drain electrode on the barrier structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.