Semiconductor devices and methods of forming semiconductor devices
US8816417B2 · kind B2 · utility
2Cited by
8References
19Claims
0Family size
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Key dates
| Filing date | Feb 25, 2010 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Nov 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/20
Abstract
A semiconductor device includes a back bias dielectric including a negative fixed charge, a gate electrode overlapping the back bias dielectric, a semiconductor layer disposed between the gate electrode and the back bias dielectric, and a gate dielectric disposed between the semiconductor layer and the gate electrode, wherein the negative fixed charge accumulates holes at a surface of the semiconductor layer facing the back bias dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.